| PART |
Description |
Maker |
| WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
512Kx8 SRAM MODULE, SMD 5962-92078
|
WEDC[White Electronic Designs Corporation]
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| PUMA68S4000AL-35/X394 PUMA68S4000A-35/X394 |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, PQCC68
|
HIROSE ELECTRIC Co., Ltd.
|
| EMS512K8EMO7-20I EMS512K8EMO7-25I EMS512K8EMO7-35I |
512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, DMA32
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, DMA32
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, DMA32
|
|
| WS128K32-25HSME |
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
| WS512K32-25G1UCA |
512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
|
WHITE ELECTRONIC DESIGNS CORP
|
| WS128K32-20HSQ |
512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
| WS128K32-25G2ME WS128K32-45G2ME |
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68
|
WHITE ELECTRONIC DESIGNS CORP
|
| WS512K16-35FLCA |
512K X 16 MULTI DEVICE SRAM MODULE, 35 ns, CDFP44
|
MICROSEMI CORP-PMG MICROELECTRONICS
|
| WS512K32NV-17G2UC |
512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 22.4 MM, 3.56 MM HEIGHT, CERAMIC, QFP-68
|
Microsemi, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
|
